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february 2007 rev 4 1/13 13 STC6NF30V n-channel 30v - 0.020 ? - 6a - tssop8 2.5v-drive stripfet? ii power mosfet general features ultra low threshold gate drive (2.5v) standard outline for easy automated surface mount assembly double dice in common drain configuration description this power mosfet is th e latest development of stmicroelectronics unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on-resistance. applications switching application internal schematic diagram type v dss r ds(on) i d STC6NF30V 30v < 0.025 ? (@ 4.5 v) < 0.030 ? (@ 2.7 v) 6a tssop8 www.st.com order code part number marking package packaging STC6NF30V c6nf30v tssop8 tape & reel
contents STC6NF30V 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STC6NF30V electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20k ? )20v v gs gate-source voltage 12 v i d drain current (continuous) at t c = 25c 6 a i d drain current (continuous) at t c =100c 3.8 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 24 a p tot total dissipation at t c = 25c 1.5 w t stg storage temperature ?55 to 150 c t j max. operating junction temperature ?55 to 150 c table 2. thermal data symbol parameter value unit r thj-pbc thermal resistance junction-pbc max 100 (1) 1. when mounted on fr-4 board with 1 inch 2 pad, 2 oz. of cu. and t = 10 sec. c/w r thj-pbc thermal resistance junction-pbc max 83.5 (2) 2. when mounted on minimum recommended footprint c/w
electrical characteristics STC6NF30V 4/13 2 electrical characteristics (t j = 25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 12v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 0.6 v r ds(on) static drain-source on resistance v gs = 4.5v, i d = 3a v gs =2.5v, i d = 3a 0.020 0.025 0.025 0.030 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 10v, i d = 6a 18 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f = 1 mhz, v gs = 0 800 180 32 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v, i d = 6a v gs = 2.5v figure 16 on page 9 6.8 2.0 3.4 9nc nc nc table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15v, i d = 3a, r g = 4.7 ?, v gs = 2.5v figure 14 on page 9 20 25 32 13 ns ns ns ns
STC6NF30V electrical characteristics 5/13 table 6. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current 6 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 24 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 6a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6a, di/dt = 100a/s, v dd = 15v, t j = 150c figure 16 on page 9 25 21 1.7 ns c a
electrical characteristics STC6NF30V 6/13 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STC6NF30V electrical characteristics 7/13 figure 7. gate charge vs. gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs. temperature figure 10. normalized on resistance vs. temperature figure 11. source-drain diode forward characteristics figure 12. normalized breakdown voltage temperature
electrical characteristics STC6NF30V 8/13 figure 13. thermal resistance and max power
STC6NF30V test circuit 9/13 3 test circuit figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times
package mechanical data STC6NF30V 10/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STC6NF30V package mechanical data 11/13
revision history STC6NF30V 12/13 5 revision history table 7. revision history date revision changes 21-jun-2004 2 complete document 03-aug-2006 3 the document has been reformatted, soa updated 01-feb-2007 4 typo mistake on first page
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